Band-gap engineering for removing shallow traps in rare-earth Lu3Al5O12 garnet scintillators using Ga3+ doping
نویسندگان
چکیده
M. Fasoli,1 A. Vedda,1 M. Nikl,2 C. Jiang,3 B. P. Uberuaga,3 D. A. Andersson,3 K. J. McClellan,3 and C. R. Stanek3,* 1Department of Materials Science, University of Milano-Bicocca, Milan 20125, Italy 2Institute of Physics AS CR, Prague 162 53, Czech Republic 3MST-8 Structure and Property Relations, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA (Received 4 August 2011; published 26 August 2011)
منابع مشابه
VUV spectroscopy of wide band-gap crystals doped with rare earth ions
Spectral and kinetic properties of vacuum ultraviolet (VUV) luminescence from different fluoride crystals doped with Nd, Er or Tm are discussed. Concentration quenching of VUV luminescence, the impact mechanism of the energy transfer from the matrix to the emission centers as well as nonradiative relaxation processes in the rare earth ions have been detected and studied. The crystal properties ...
متن کاملSingle crystalline LuAG fibers for homogeneous dual-readout calorimeters
For the next generation of calorimeters, designed to improve the energy resolution of hadrons and jets measurements, there is a need for highly granular detectors requiring peculiar geometries. Heavy inorganic scintillators allow compact homogeneous calorimeter designs with excellent energy resolution and dual-readout abilities. These scintillators are however not usually suited for geometries ...
متن کاملEngineering energy gap of the carbon saturated nanowire and investigating the ammonia molecule doping effects by using the initial calculations (Ab initio)
In this paper size effects, growth orientation and also doping by Ammonia molecule (NH3) on the carbon nanowire properties with saturated diamond structure by (DNw:H) have been investigated. This study was carried out using DFT theory and Kohn-Sham equation by self-consistent field (SCF) that performed by local density approximation (LDA). The nanowires morphology is cylindrical with [111] grow...
متن کاملComment on "paired gap states in a semiconducting carbon nanotube: deep and shallow levels".
Several paired, localized gap states were observed in semiconducting single-wall carbon nanotubes using spatially resolved scanning tunneling spectroscopy. A pair of gap states is found far from the band edges, forming deep levels, while the other pair is located near the band edges, forming shallow levels. With the help of a first-principles study, the former is explained by a vacancy-adatom c...
متن کاملInfluence of the doping profile and deep level trap characteristics on generation-recombination noise
Generation-recombination ~g-r! noise originated by the fluctuating occupancy of deep level traps in the depletion regions of a junction field effect transistor ~JFET! has been thoroughly analyzed. A numerical simulator of this type of device, which allows us to calculate all relevant electrical magnitudes in the structure, was used to calculate the noise power spectral density. To check our sim...
متن کامل